MRF6S19060NR1 MRF6S19060NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for N--CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
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Typical 2--Carrier N--CDMA Performance: VDD
=28Volts,IDQ
= 610 mA,
Pout
= 12 Watts Avg., f = 1930 MHz, IS--95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — --37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — --51 dBc in 30 kHz Bandwidth
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Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW
Output Power
Features
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Characterized with Series Equivalent Large--Signal Impedance Parameters
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Internally Matched for Ease of Use
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Qualified Up to a Maximum of 32 VDD
Operation
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Integrated ESD Protection
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Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
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225_C Capable Plastic Package
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N Suffix Indicates Lead--Free Terminations. RoHS Compliant.
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In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 60 W CW
Case Temperature 79°C, 12 W CW
RθJC
0.84
1.0
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MRF6S19060N
Rev. 5, 12/2010
Freescale Semiconductor
Technical Data
MRF6S19060NR1
MRF6S19060NBR1
1930--1990 MHz, 12 W AVG., 28 V
2xN--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
PLASTIC
MRF6S19060NR1
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF6S19060NBR1
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Freescale Semiconductor, Inc., 2005--2006, 2008, 2010.
All rights reserved.
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